IRGB10B60KDPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Package / Case : TO-220AB
Power Dissipation : 104 W
Continuous Collector Current at 25 C : 22 A


Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600
IC @ TC = 25	Continuous Collector Current	22	A
IC @ TC = 100	Continuous Collector Current	12
ICM	Pulse Collector Current (Ref. Fig. C.T.4)	44
ILM	Clamped Inductive Load Current	44
IF @ TC = 25	Diode Continous Forward Current	22
IF @ TC = 100	Diode Continous Forward Current	10
IFRM	Maximum Repetitive Forward Current	44
VGE	Gate-to-Emitter Voltage	±20	V
PD @ TC = 25	Maximum Power Dissipation	156	W
PD @ TC = 100	Maximum Power Dissipation	62
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)

Parameters:

Technical/Catalog Information	IRGB10B60KDPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	22A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 10A
Power - Max	156W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGB10B60KDPBF IRGB10B60KDPBF