IGBT Transistors
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 430 V |
| Collector-Emitter Saturation Voltage : | 1.4 V | Maximum Gate Emitter Voltage : | 10 V |
| Continuous Collector Current at 25 C : | 20 A | Power Dissipation : | 125 W |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220AB |
| Packaging : | Tube |
| Technical/Catalog Information | IRGB14C40LPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Logic |
| Voltage - Collector Emitter Breakdown (Max) | 430V |
| Current - Collector (Ic) (Max) | 20A |
| Vce(on) (Max) @ Vge, Ic | 1.75V @ 5V, 14A |
| Power - Max | 125W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGB14C40LPBF IRGB14C40LPBF |