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IRGBC30M

Features: • Short circuit rated - 10s @ 125°C, V GE = 15V• Switching-loss rating includes all tail losses• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Em...

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SeekIC No. : 004377780 Detail

IRGBC30M: Features: • Short circuit rated - 10s @ 125°C, V GE = 15V• Switching-loss rating includes all tail losses• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Cu...

IRGBC30M Data Sheet

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Part Number:
IRGBC30M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Short circuit rated - 10s @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
26
A
IC @ TC =100°C Continuous Collector Current
16
ICM Pulsed Collector Current
52
ILM Clamped Inductive Load Current
52
tsc Short Circuit Withstand Time
10
s
VGE Gate-to-Emitter Voltage
±20
V
EARV Reverse Voltage Avalanche Energy
10
mJ
PD @ TC = 25°C Maximum Power Dissipation
100
W
PD @ TC =100°C Maximum Power Dissipation
42
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to +150
°C
  Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC30M provides substantial benefits to a host of high-voltage, highcurrent applications.

These new short circuit rated devices IRGBC30M are especially suited for motor control and other applications requiring short circuit withstand capability.




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