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IRGBC20U

Features: • Switching-loss rating includes all tail losses• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continu...

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SeekIC No. : 004377772 Detail

IRGBC20U: Features: • Switching-loss rating includes all tail losses• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Paramet...

IRGBC20U Data Sheet

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Part Number:
IRGBC20U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
   See Fig. 1 for Current vs. Frequency curve


Specifications

 Parameter
Max.
Units
VCES
 Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
 Continuous Collector Current
13
A
IC @ TC = 100°C
 Continuous Collector Current
6.5
A
ICM
 Pulsed Collector Current
52
A
ILM
 Clamped Inductive Load Current
52
A
VGE
 Gate-to-Emitter Voltage
±20
mJ
EARV
 Reverse Voltage Avalanche Energy
5
W
PD @ TC = 25°C
 Maximum Power Dissipation
60
W
PD @ TC = 100°C
 Maximum Power Dissipation
24
°C
TJ
TSTG
 Operating Junction and Storage Temperature Range
-55 to +150
°C
 Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
>


Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGBC20U  have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGBC20U  provides substantial benefits to a host of high-voltage, highcurrent applications.




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