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IRGBC20K-S

Features: Short circuit rated - 10s @ 125°C, VGE = 15VSwitching-loss rating includes all tail lossesOptimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC =...

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SeekIC No. : 004377766 Detail

IRGBC20K-S: Features: Short circuit rated - 10s @ 125°C, VGE = 15VSwitching-loss rating includes all tail lossesOptimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveSpe...

IRGBC20K-S Data Sheet

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Part Number:
IRGBC20K-S
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Short circuit rated - 10s @ 125°C, VGE = 15V
Switching-loss rating includes all "tail" losses
Optimized for high operating frequency (over 5kHz)
   See Fig. 1 for Current vs. Frequency curve


Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 10 A
IC @ TC = 100°C Continuous Collector Current 6.0
ICM Pulsed Collector Current 20
ILM Clamped Inductive Load Current 20
VGE Gate-to-Emitter Voltage 10 s
EARV Reverse Voltage Avalanche Energy 5.0 mJ
PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to +150 °C
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw 10 lbf*in (1.1N*m)  



Description

Insulated Gate Bipolar Transistors (IGBTs) IRGBC20K-S from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.  The IRGBC20K-S provides substantial benefits to a host of high-voltage, high- current applications.

These new short circuit rated devices IRGBC20K-S are especially suited for motor control and other applications requiring short circuit withstand capability.




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