IRGB6B60KDPBF

IGBT Transistors 600V UltraFast 10-30kHz

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IRGB6B60KDPBF: IGBT Transistors 600V UltraFast 10-30kHz

floor Price/Ceiling Price

US $ .91~1.88 / Piece | Get Latest Price
Part Number:
IRGB6B60KDPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.88
  • $1.28
  • $.95
  • $.91
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 13 A Power Dissipation : 90 W
Package / Case : TO-220AB Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Package / Case : TO-220AB
Continuous Collector Current at 25 C : 13 A
Power Dissipation : 90 W


Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-220 is available in PbF as a Lead-Free



Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25 Continuous Collector Current 13 A
IC @ TC = 100 Continuous Collector Current 7.0
ICM Pulsed Collector Current 26
ILM Clamped Inductive Load Current 26
IF @ TC = 25 Diode Continuous Forward Current 13
IF @ TC = 100 Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 26
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25 Maximum Power Dissipation 90 W
PD @ TC = 100 Maximum Power Dissipation 36
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to +150
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)  
VCC = 80% (VCES), VGE = 20V, L = 100 H, RG = 100.


Parameters:

Technical/Catalog InformationIRGB6B60KDPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)13A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 5A
Power - Max90W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRGB6B60KDPBF
IRGB6B60KDPBF



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