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IRGB6B60KD

Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.Specifications Parameter Max...

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SeekIC No. : 004377760 Detail

IRGB6B60KD: Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Charac...

IRGB6B60KD Data Sheet

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Part Number:
IRGB6B60KD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.




Specifications

Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
ID @ TC = 25°C Continuous Collector Current
13
A
ID @ TC = 100°C Continuous Collector Current
7.0
ICM Pulsed Collector Current
26
ILM Clamped Inductive Load Current
26
IF @ TC = 25°C Diode Continuous Forward Current
13
IF @ TC = 100°C Diode Continuous Forward Current
7.0
IFM Diode Maximum Forward Current
26
VGE Gate-to-Emitter Voltage
± 20
V
PD @TC = 25°C Max. Power Dissipation
90
W
PD @ TC = 100°C Maximum Power Dissipation
36
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)





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