IGBT Transistors 1200V UltraFast 10-30kHz
IRGB5B120KDPBF: IGBT Transistors 1200V UltraFast 10-30kHz
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1.2 KV | ||
Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 12 A | Power Dissipation : | 89 W | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter | Max. | Units | |
VCES | Collector-to-Emitter Voltage | 1200 | V |
IC @ TC = 25 | Continuous Collector Current | 12 | A |
IC @ TC =100 | Continuous Collector Current | 6.0 | |
ICM | Pulsed Collector Current | 24 | |
ILM | Clamped Inductive Load Current | 24 | |
IF @ TC = 25 | Diode Continuous Forward Current | 12 | |
IF @ TC =100 | Diode Continuous Forward Current | 6.0 | |
IFM | Diode Maximum Forward Current | 24 | |
VGE | Gate-to-Emitter Voltage | ± 20 | V |
PD @ TC = 25 | Maximum Power Dissipation | 89 | W |
PD @ TC =100 | Maximum Power Dissipation | 36 | |
TJ,TSTG | Operating Junction and Storage Temperature Range | -55 to +150 | |
Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
Technical/Catalog Information | IRGB5B120KDPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 12A |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 6A |
Power - Max | 89W |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRGB5B120KDPBF IRGB5B120KDPBF |