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IRGB5B120KD

Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.• TO-220 Package.Specifications ...

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SeekIC No. : 004377758 Detail

IRGB5B120KD: Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Charac...

IRGB5B120KD Data Sheet

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Part Number:
IRGB5B120KD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-220 Package.




Specifications
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
1200
V
IC @ TC = 25
Continuous Collector Current
12
A
IC @ TC = 100
Continuous Collector Current
6.0
ICM
Pulsed Collector Current
24
ILM
Clamped Inductive Load Current
24
IF @ TC = 25 Diode Continuous Forward Current
12
IF @ TC = 100 Diode Continuous Forward Current
6.0
IFM Diode Maximum Forward Current
24
VGE
Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25
Maximum Power Dissipation
89
W
PD @ TC = 100
 Maximum Power Dissipation
36
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)





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