IGBT Transistors 600V Low VCEon
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 12 A | Power Dissipation : | 63 W | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Technical/Catalog Information | IRGB4B60KPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 12A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 4A |
Power - Max | 63W |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRGB4B60KPBF IRGB4B60KPBF |