IRGB4B60KD1PBF

IGBT Transistors 600V Low-Vceon Non Punch Through

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SeekIC No. : 00142278 Detail

IRGB4B60KD1PBF: IGBT Transistors 600V Low-Vceon Non Punch Through

floor Price/Ceiling Price

US $ .91~2.08 / Piece | Get Latest Price
Part Number:
IRGB4B60KD1PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.08
  • $1.35
  • $.97
  • $.91
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 12 A Power Dissipation : 63 W
Package / Case : TO-220AB Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB
Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 12 A
Power Dissipation : 63 W


Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• 10s Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175.
• TO-220 is available in PbF as Lead-Free



Application

• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.



Specifications

Symbol Parameter Max. Unit
VCES Collector-emitter voltage 600 V
IC @ TC = 25 Continuous Collector Current 11 A
IC @ TC = 100 Continuous Collector Current 7.6
ICM Pulse Collector Current (Ref.Fig.C.T.5) 22
ILM Clamped Inductive Load current 22
IF @ TC = 25 Diode Continuous Forward Current 11
IF @ TC = 100 Diode Continuous Forward Current 6.7
IFM Diode Maximum Forward Current 22
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25 Maximum Power Dissipation 63 W
PD @ TC = 100 Maximum Power Dissipation 31
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to +175
  Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)



Parameters:

Technical/Catalog InformationIRGB4B60KD1PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)11A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 4A
Power - Max63W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRGB4B60KD1PBF
IRGB4B60KD1PBF



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