IGBT Transistors 600V Low-Vceon Non Punch Through
IRGB4B60KD1PBF: IGBT Transistors 600V Low-Vceon Non Punch Through
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 12 A | Power Dissipation : | 63 W | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Symbol | Parameter | Max. | Unit |
VCES | Collector-emitter voltage | 600 | V |
IC @ TC = 25 | Continuous Collector Current | 11 | A |
IC @ TC = 100 | Continuous Collector Current | 7.6 | |
ICM | Pulse Collector Current (Ref.Fig.C.T.5) | 22 | |
ILM | Clamped Inductive Load current | 22 | |
IF @ TC = 25 | Diode Continuous Forward Current | 11 | |
IF @ TC = 100 | Diode Continuous Forward Current | 6.7 | |
IFM | Diode Maximum Forward Current | 22 | |
VGE | Gate-to-Emitter Voltage | ±20 | V |
PD @ TC = 25 | Maximum Power Dissipation | 63 | W |
PD @ TC = 100 | Maximum Power Dissipation | 31 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +175 | |
Storage Temperature Range, for 10 sec. | 300 (0.063 in. (1.6mm) from case) |
Technical/Catalog Information | IRGB4B60KD1PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 11A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 4A |
Power - Max | 63W |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRGB4B60KD1PBF IRGB4B60KD1PBF |