Features: • Switching-loss rating includes all tail losses• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 500 V IC @ TC = 25°C Continuous ...
IRGB420U: Features: • Switching-loss rating includes all tail losses• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Paramet...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
Parameter |
Max. |
Units | |
VCES | Collector-to-Emitter Voltage |
500 |
V |
IC @ TC = 25°C | Continuous Collector Current |
14 |
A |
IC @ TC = 100°C | Continuous Collector Current |
7.5 | |
ICM | Pulsed Collector Current |
28 | |
ILM | Clamped Inductive Load Current |
28 | |
VGE | Gate-to-Emitter Voltage |
± 20 |
V |
EARV | Reverse Voltage Avalanche Energy |
5.0 |
mJ |
PD @ TC = 25°C | Maximum Power Dissipation |
60 |
W |
PD @ TC = 100°C | Maximum Power Dissipation |
24 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
Soldering Temperature, for 10 seconds |
300 (0.063 in. (1.6mm) from case) | ||
Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
Parameter |
Typ. |
Max. |
Units | |
RJC | Junction-to-Case |
- |
2.1 |
°C/W |
RCS | Case-to-Sink, flat, greased surface |
0.50 |
- | |
RJA | Junction-to-Ambient, typical socket mount |
- |
80 | |
Wt | Weight |
2.0 (0.07) |
- |
g(oz) |
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGB420U have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGB420U provides substantial benefits to a host of high-voltage, highcurrent applications.