IGBT Transistors 600V UltraFast Trench IGBT
IRGB4045DPBF: IGBT Transistors 600V UltraFast Trench IGBT
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 12 A | Power Dissipation : | 77 W | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter |
Max. |
Units | |
VCES |
Collector-to-Emitter Voltage |
600 |
V |
IC @ TC = 25 |
Continuous Collector Current |
12 |
A |
IC @ TC = 100 |
Continuous Collector Current |
6.0 | |
ICM |
Pulse Collector Current |
20 | |
ILM |
Clamped Inductive Load Current |
20 | |
IF @ TC = 25 |
Diode Continous Forward Current |
8.0 | |
IF @ TC = 100 |
Diode Continous Forward Current |
4.0 | |
IFRM |
Diode Maximum Forward Current |
20 | |
VGE |
Continuous Gate-to-Emitter Voltage |
±20 |
V |
Transient Gate-to-Emitter Voltage |
±30 | ||
PD @ TC = 25 |
Maximum Power Dissipation |
77 |
W |
PD @ TC = 100 |
Maximum Power Dissipation |
39 | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) |
Technical/Catalog Information | IRGB4045DPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 12A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 6A |
Power - Max | 77W |
Mounting Type | Through Hole |
Package / Case | TO-220AB |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRGB4045DPBF IRGB4045DPBF |