IRGB15B60KDPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Package / Case : TO-220AB
Continuous Collector Current at 25 C : 31 A
Power Dissipation : 139 W


Features:

• Low VCE (on) Non Punch Through IGBT
Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC = 25	Continuous Collector Current	31	A
IC @ TC = 100	Continuous Collector Current	15
ICM	Pulse Collector Current	62
ILM	Clamped Inductive Load Current	62
IF @ TC = 25	Diode Continous Forward Current	31
IF @ TC = 100	Diode Continous Forward Current	15
IFRM	Diode Maximum Forward Current	64
VGE	Gate-to-Emitter Voltage	±20	V
PD @ TC = 25	Maximum Power Dissipation	208	W
PD @ TC = 100	Maximum Power Dissipation	83
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)

Parameters:

Technical/Catalog Information	IRGB15B60KDPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	31A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 15A
Power - Max	208W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGB15B60KDPBF IRGB15B60KDPBF