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IRGB15B60KD

Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.Specifications Parameter Max. U...

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SeekIC No. : 004377749 Detail

IRGB15B60KD: Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Charac...

IRGB15B60KD Data Sheet

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Part Number:
IRGB15B60KD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.




Specifications

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 31 A
IC @ TC = 100°C Continuous Collector Current 15
ICM Pulsed Collector Current 62
ILM Clamped Inductive Load Current 62
IF @ TC = 25°C Diode Continuous Forward Current 31
IF @ TC = 100°C Diode Continuous Forward Current 15
IFM Diode Maximum Forward Current 64
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 208 W
PD @ TC = 100°C Maximum Power Dissipation 83
TJ
TSTG		 Operating Junction and
Storage Temperature Range
 -55 to +150 °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)





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