IGBT Transistors 1200V Trench IGBT Generic Ind App
IRG7PH42UD-EP: IGBT Transistors 1200V Trench IGBT Generic Ind App
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1.2 KV | ||
Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 30 V | ||
Continuous Collector Current at 25 C : | 85 A | Power Dissipation : | 320 W | ||
Package / Case : | TO-247 | Packaging : | Tube |
Technical/Catalog Information | IRG7PH42UD-EP |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 85A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
Power - Max | 320W |
Mounting Type | Through Hole |
Package / Case | TO-247AD |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRG7PH42UD EP IRG7PH42UDEP |