IGBT Transistors
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Collector- Emitter Voltage VCEO Max : | 360 V | Collector-Emitter Saturation Voltage : | 1.52 V |
Maximum Gate Emitter Voltage : | +/- 30 V | Continuous Collector Current at 25 C : | 20 A |
Gate-Emitter Leakage Current : | +/- 100 nA | Power Dissipation : | 34 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220 |
Packaging : | Tube |