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IRG4ZC70UD

Features: UltraFast IGBT optimized for high switching frequencies IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Low gate chargeLow profile low inductance SMD-10 packageSeparated control & Power-connections for easy para...

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SeekIC No. : 004377740 Detail

IRG4ZC70UD: Features: UltraFast IGBT optimized for high switching frequencies IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Low gate ch...

IRG4ZC70UD Data Sheet

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Part Number:
IRG4ZC70UD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

 UltraFast IGBT optimized for high switching frequencies
IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations
Low gate charge
 Low profile low inductance SMD-10 package
 Separated control & Power-connections for easy paralleling
 Inherently coplanar pins and tab
 Easy solder inspection and cleaning


Specifications

Parameter
Max.
Units
VCES Collector-to-Emitter Breakdown Voltage
600
V
ID @ TC = 25°C Continuous Drain Current
100
A
ID @ TC = 100°C Continuous Drain Current
50
ICM Pulsed Drain Current
400
ILM Clamped Inductive Load Current
400
IF @ TC = 100°C Diode Continuous Forward Current
50
IFM Diode Maximum Forward Current
400
VGE Gate-to-Emitter Voltage
± 20
V
PD @TC = 25°C Max. Power Dissipation
350
W
PD @ TC = 100°C Maximum Power Dissipation
140
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C



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