IRG4PC50WPBF

IGBT Transistors 600V Warp 60-150kHz

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IRG4PC50WPBF: IGBT Transistors 600V Warp 60-150kHz

floor Price/Ceiling Price

US $ 2.15~4.42 / Piece | Get Latest Price
Part Number:
IRG4PC50WPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $4.42
  • $3.02
  • $2.25
  • $2.15
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.3 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 55 A Power Dissipation : 200 W
Package / Case : TO-247 Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-247
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.3 V
Continuous Collector Current at 25 C : 55 A
Power Dissipation : 200 W


Pinout

  Connection Diagram




Description

The IRG4PC50WPbF are designed expressly for Switch-Made Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies, 50% reduction of Eoff parameter, Low IGBT conduction losses, Latest-generation IGBT design and construction, offers tighter parameters distribution, exceptional reliability, Lead-Free.
The Benefits of IRG4PC50WPbF are Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode), Of particular benetit to single-ended converters and boost PFC topologies 150W and higher, Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz)
The absolute maximum ratings of IRG4PC50WPbF are VGE (Gate-to-Emitter Voltage)=±20V, IC @ TC= 25°C (Continuous Drain Current)=55A, IC @ TC = 100°C (Continuous Drain Current)=27A, ICM (Pulsed Drain Current)=27A, PD (@Tc = 25°C Power Dissipation)=200W, PD (@Tc =100°C Power Dissipation)=78W, EARV(Repetitive Avalanche Energy)=170mJ, TJ (Operating Junction and)= -55 to +150°C=TSTG, RJC( Junction-to-Case )=0.64°C/W, RJA( Junction-to-Ambient )=40°C/W.








Parameters:

Technical/Catalog InformationIRG4PC50WPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)55A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 27A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseTO-247-3 (TO-247AC, Straight Leads)
PackagingBag
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRG4PC50WPBF
IRG4PC50WPBF



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