IRG4PC50UDPBF

IGBT Transistors 600V UltraFast 8-60kHz

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SeekIC No. : 00142320 Detail

IRG4PC50UDPBF: IGBT Transistors 600V UltraFast 8-60kHz

floor Price/Ceiling Price

US $ 2.9~5.21 / Piece | Get Latest Price
Part Number:
IRG4PC50UDPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $5.21
  • $3.82
  • $3.02
  • $2.9
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 55 A Power Dissipation : 200 W
Package / Case : TO-247 Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-247
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Continuous Collector Current at 25 C : 55 A
Power Dissipation : 200 W


Features:

·UltraFast:  Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
·Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
·IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
·Industry standard TO-247AC package
·Lead-Free



Specifications

Symbol
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
ID @ TC =25 Continuous Drain Current
55
A
ID @ TC =100 Continuous Drain Current
27
ICM Pulsed Collector Current
220
ILM Clamped Inductive Load Current
220
IF @ TC =100 Pulsed Drain Current
25
IFM Diode Maximum Forward Current
220
IGE Gate-to-Emitter Voltage
±20
V
PD @TC=25 Maximum Power Dissipation
200
W
PD @TC=100 Maximum Power Dissipation
78
TJ,TSTG Operating Junction and Storage Temperature
Range
-55 to+150
  Soldering Temperature for 10 seconds
300
  Mounting Torque, 6-32 or M3 Screw
10lb.in (1.1N.m)
 
Parameter
Typ
Max.
Units
RJC
RJC
RCS
RJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
-
-
0.24
-
6(0.21)
0.64
0.83
-
40
-
/W



g(oz)



Parameters:

Technical/Catalog InformationIRG4PC50UDPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)55A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 27A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseTO-247-3 (TO-247AC, Straight Leads)
PackagingBag
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRG4PC50UDPBF
IRG4PC50UDPBF



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