IRG4PC50SPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-247
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 70 A
Power Dissipation : 200 W
Collector-Emitter Saturation Voltage : 1.36 V


Description

The IRG4PC50SPbF is designed asinsulated gate bipolar transistor, standard speed IGBT. Typical benefits include generation 4 IGBT offer highest efficiency available, IGBT's optimized for specified application conditions and to be "drop-in" replacement for equivalent industry-standard generation 3 IR IGBTs.

The IRG4PC50SPbF has four features. (1)Standard: optimized for minimum saturation voltage and low operating frequencies (<1kHz). (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. (3)Industry standard TO-247AC package. (4)Lead free. That are all the main features.

Some absolute maximum ratings of IRG4PC50SPbF have been concluded into several points as follow. (1)Its continuous drain current would be 70A at 25°C and would be 41A at 100°C. (2)Its collector to emitter breakdown voltage would be 600V. (3)Its pulsed collector current would be 140A. (4)Its clamped inductive load current would be 140A. (5)Its gate to emitter voltage would be +/-20V. (6)Its reverse voltage avalanche energy would be 20mJ. (7)Its maximum power dissipation would be 200W at 25°C and would be 78W at 100°C. (8)Its operating junction and storage temperature range would be from -55°C to +150°C. (9)Its soldering temperature for 10 seconds would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of IRG4PC50SPbF are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its emitter to collector breakdown voltage would be min 18V. (3)Its temperature coeff. of breakdown voltage would be typ 0.75V/°C. (4)Its gate threshold voltage would be min 3.0V and max 6.0V. (5)Its forward transconductance would be min 17S and typ 34S. (6)Its gate to emitter leakage current would be max 100nA. (7)Its total gate charge (turn on) would be typ 180nC and max 280nC. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	IRG4PC50SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	70A
Vce(on) (Max) @ Vge, Ic	1.36V @ 15V, 41A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4PC50SPBF IRG4PC50SPBF