IRG4PC50KPBF

IGBT Transistors 600V UltraFast 8-25kHz

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SeekIC No. : 00142447 Detail

IRG4PC50KPBF: IGBT Transistors 600V UltraFast 8-25kHz

floor Price/Ceiling Price

US $ 1.93~3.95 / Piece | Get Latest Price
Part Number:
IRG4PC50KPBF
Mfg:
International Rectifier
Supply Ability:
5000

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  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $3.95
  • $2.71
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  • $1.93
  • Processing time
  • 15 Days
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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.2 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 52 A Power Dissipation : 200 W
Package / Case : TO-247 Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-247
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Power Dissipation : 200 W
Continuous Collector Current at 25 C : 52 A


Features:






Specifications






Description

The features of IRG4PC50KPbF are high short circuit rating optimized for motor control, tsc=10s, @360V VCE (start), TJ=125°C, VGE =15V; combines low conduction losses with high switching speed; latest generation design provides tighter parameter distribution and higher efnciency than prewousgenerations; lead-free.

The benefits of IRG4PC50KPbF are as a freewheeling diode we recommend our HEXFREDTM ultrafast, ultrasoit recovery diodes for minimum EMI I noise and switching losses in the diode and IGBT; latest generation 4 IGBTs offer highest power density motor controls possible; this part replaces the IRGPCSOK and IRGPCEOM devices.

The parameters of the IRG4PC50KPbF are VGE (gate-to-emitter Voltage)=±20V, IC @ Tc= 25°C (continuous drain current)=52A, ID @ Tc = 100°C (continuous drain current)=30A, ICM (pulsed collector current)=104A, EARV (reverse voltage avalanche energy)=170mJ, PD (@Tc= 25°C power dissipation)=200W,  PD (@Tc=100°C power dissipation)=78W, ICM( pulsed collector current)= 104A, TJ (operating junction and)= -55 to + 150°C=TSTG(storage temperature range), (soldering temperature, for 10 seconds )=300 (1.6mm from case )°C, RJC( junction-to-case )=0.64(max)°C/W, RJA (junction-to-ambient, typical socket mount)= 40(typ)°C/W, RCS(case-to-sink, flat, greased surface)=0.24(typ)°C/W.






Parameters:

Technical/Catalog InformationIRG4PC50KPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)52A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 30A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseTO-247AC
PackagingBag
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRG4PC50KPBF
IRG4PC50KPBF



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