IRG4BC20MDPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB
Power Dissipation : 60 W
Continuous Collector Current at 25 C : 18 A


Features:

· Rugged: 10µsec short circuit capable at V_GS=15V
· Low V_CE(on) for 4 to 10kHz applications
· IGBT Co-packaged with ultra-soft-recovery antiparallel diode
· Industry standard TO-220AB package
· Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
ID @ TC = 25°C	Continuous Drain Current	18	A
ID @ TC =100°C	Continuous Drain Current	11	A
ICM	Pulsed Collector Current	36	A
ILM	Clamped Inductive Load Current	36	A
IF @ TC = 100°C	Diode Continuous Forward Current	7.0	A
tSC	Short Circuit Withstand Time	10	µs
IFM	Diode Maximum Forward Current	36	V
VGE	Gate-to-Emitter Voltage	± 20	A
PD @ TC = 25	Maximum Power Dissipation	60	W
PD @ TC = 100	Maximum Power Dissipation	24	W
TJ	Operating Junction and	-55 to +150	W/
TSTG	Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.	300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m)

Parameters:

Technical/Catalog Information	IRG4BC20MDPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	18A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 11A
Power - Max	60W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC20MDPBF IRG4BC20MDPBF