IRG4BC10SDPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB
Collector-Emitter Saturation Voltage : 1.7 V
Continuous Collector Current at 25 C : 14 A
Power Dissipation : 38 W


Features:

• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3KHz PWM frequency in inverter drives, up to 4KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast,ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC = 25	Continuous Drain Current VGS @ 10V	14	A
IC @ TC =100	Continuous Drain Current VGS @ 10V	8
ICM	Pulsed Drain Current	18
ILM	Clamped Inductive Load Current	18
IF @ TC = 100	Max. Power Dissipation	4.0
IFM	Diode Maximum Forward Current	18
VGE	Gate-to-Emitter Voltage	±20	V
PD @ TC = 25	Maximum Power Dissipation	38	W
PD @ TC = 100	Maximum Power Dissipation	15
TJ	Operating Junction	-55 to 170
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 sec.	300(0.063 in.(1.6mm)from case)
	Mounting Torque, 6-32 or M3 Screw.	10 lbf`in (1.1 N`m)

Parameters:

Technical/Catalog Information	IRG4BC10SDPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	14A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 8A
Power - Max	38W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC10SDPBF IRG4BC10SDPBF