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IRG4BC10SD

IGBT UFAST 600V 14.0A TO-220AB

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SeekIC No. : 003434378 Detail

IRG4BC10SD: IGBT UFAST 600V 14.0A TO-220AB

IRG4BC10SD Data Sheet

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Part Number:
IRG4BC10SD
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: - Manufacturer: International Rectifier
IGBT Type: - Frequency : 0.5 GHz to 2 GHz
Voltage - Collector Emitter Breakdown (Max): 600V Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Current - Collector (Ic) (Max): 14A Power - Max: 38W
Input Type: Standard Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

Series: -
Manufacturer: International Rectifier
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Current - Collector (Ic) (Max): 14A
Power - Max: 38W
Input Type: Standard
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220AB


Features:

• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3
   KHz PWM frequency in inverter drives, up to 4
   KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast,ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Breakdown Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
14
A
IC @ TC = 100°C Continuous Collector Current
8.0
ICM Pulsed Collector Current
18
ILM Clamped Inductive Load Current
18
IF @ TC = 100°C Diode Continuous Forward Current
4.0
IFM Diode Maximum Forward Current
18
VGE Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25°C Maximum Power Dissipation
38
PD @ TC = 100°C Maximum Power Dissipation
15
W
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw.
10 lbf`in (1.1N`m)
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case - IGBT
-
3.3
°C/W
RJC Junction-to-Case - Diode
-
7.0
RCS Case-to-Sink, Flat, Greased Surface
0.50
-
RJA Junction-to-Ambient,typical socket mount
-
80
Wt Weight
2.0(0.07)
-
g (oz)



Parameters:

Technical/Catalog InformationIRG4BC10SD
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)14A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 8A
Power - Max38W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRG4BC10SD
IRG4BC10SD



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