IRG4BC10SD-SPBF, US $ .73-1.66 , International Rectifier, IRG4BC10SD-SPBF DataSheet download, circuit diagram from SeekIC.com

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IRG4BC10SD-SPBF: IGBT Transistors 600V DC-1kHz

IRG4BC10SD-SPBF Data Sheet

US $ .73~1.66 / Piece | Get Latest Price

Part Number:: IRG4BC10SD-SPBF
Mfg:: International Rectifier
Supply Ability:: 5000

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Upload time: 2024/12/21

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Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Collector-Emitter Saturation Voltage :	1.8 V	Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	14 A	Power Dissipation :	38 W
Package / Case :	D2PAK	Packaging :	Tube

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.8 V
Package / Case : D2PAK
Continuous Collector Current at 25 C : 14 A
Power Dissipation : 38 W

Features:

• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFRED^TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard D²Pak & TO-262 packages
• Lead-Free

Specifications

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ T_C= 25	Continuous Collector Current	14	A
I_C @ T_C = 100	Continuous Collector Current	8.0
I_CM	Pulsed Collector Current	18
I_LM	Clamped Inductive Load Current	18
I_F @ T_C= 100	Diode Continuous Forward Current	4.0
I_FM	Diode Maximum Forward Current	18
V_GE	Gate-to-Emitter Voltage	± 20	V
P_D @ T_C = 25	Maximum Power Dissipation	38	W
P_D @ T_C= 100	Maximum Power Dissipation	15	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)

Repetitive rating: V_GE=20V; pulse width limited by maximum junction temperature (figure 20)
V_CC=80%(VCES), V_GE=20V, L=10H, R_G = 100W (figure 19)

Parameters:

Technical/Catalog Information	IRG4BC10SD-SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	14A
Vce(on) (Max) @ Vge, Ic	1.8V @ 18V, 8A
Power - Max	38W
Mounting Type	Surface Mount
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC10SD SPBF IRG4BC10SDSPBF

IRG4BC10SD-SPBF

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