IRFZ48Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 64nC @ 10V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 61A
Input Capacitance (Ciss) @ Vds: 1720pF @ 25V
Power - Max: 91W
Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V


Features:

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V(Silicon Limited)	61	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V(See Fig. 9)	43
IDM	Pulsed Drain Current	240
PD @TC = 25°C	Maximum Power Dissipation	91	W
	Linear Derating Factor	0.61	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy (Thermally Limited)	73	mJ
EAS (tested)	Single Pulse Avalanche Energy Tested Value	120
IAR	Avalance Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ Tstg	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Specifically designed for Automotive applications, this HEXFET_® Power MOSFET IRFZ48Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFZ48Z features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.