IRFZ48VS

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Supplier Device Package: D2PAK
Power - Max: 150W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 72A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds: 1985pF @ 25V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	72	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	51
IDM	Pulsed Drain Current	290
PD @TC = 25°C	Power Dissipation	150	W
	Linear Derating Factor	1.0	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	166	mJ
IAR	Avalance Current	72	A
EAR	Repetitive Avalanche Energy	15	mJ
dv/dt	Peak Diode Recovery dv/dt	5.3	V/ns
TJ Tstg	Operating Junction and Storage Temperature Range	-55 to +175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbfin (1.1Nm)

Description

Advanced HEXFET^® Power MOSFETs from International Rectifier IRFZ48VS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48VS design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak IRFZ48VS is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D²Pak IRFZ48VS is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.