IRFZ48RPBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.018 Ohms


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Drop in Replacement of the IRFZ48 for Linear/Audio Applications
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	50*	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	50*
IDM	Pulsed Drain Current	290
PD @TC = 25°C	Power Dissipation	190	W
	Linear Derating Factor	1.3	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	100	mJ
IAR	Avalanche Current	50	A
EAR	Repetitive Avalanche Energy	19	mJ
dv/dt	Peak Diode Recovery dv/dt	4.5	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N?m)

Description

Advanced HEXFET^® Power MOSFETs from International Rectifier IRFZ48RPbF  utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48RPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.