Features: ` Advanced Process Technology` Dynamic dv/dt Rating` 175 Operating Temperature` Fast Switching` Fully Avalanche Rated` Drop in Replacement of the IRFZ48 for Linear/Audio ApplicationsSpecifications Parameter Maximum Units ID @ TA = 25 Continuous Drain Current, VGS @ 1...
IRFZ48RL: Features: ` Advanced Process Technology` Dynamic dv/dt Rating` 175 Operating Temperature` Fast Switching` Fully Avalanche Rated` Drop in Replacement of the IRFZ48 for Linear/Audio ApplicationsSpecif...
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Parameter |
Maximum |
Units | |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V |
50* |
A |
ID @ TA = 70 | Continuous Drain Current, VGS @ 10V |
50* | |
IDM | Pulsed Drain Current |
290 | |
PD @TA = 25 | Power Dissipation |
190 |
W |
Linear Derating Factor |
1.3 |
mW/ | |
VGS | Linear Derating Factor |
± 20 |
V |
EAS | Single Pulse Avalanche Energy |
100 |
|
dv/dt | Peak Diode Recovery dv/dt |
4.5 |
V/ns |
TJ,TSTG | Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds |
-55 to +150 300 (1.6mm from case ) |
|
Mounting torque, 6-32 or M3 srew |
10 lbf•in (1.1N•m) |
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48RL utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48RL design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak IRFZ48RL is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRFZ48RL is suitable for high current applications because of its low internal connection resistance