FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Gate Charge (Qg) @ Vgs: 81nC @ 10V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 64A
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds: 1970pF @ 25V
Specifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
64 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
45 |
| IDM |
Pulsed Drain Current |
210 |
| PD @TC = 25°C |
Power Dissipation |
3.8 |
W |
| |
Linear Derating Factor |
0.83 |
W/°C |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| IAR |
Avalance Current |
32 |
A |
| EAR |
Repetitive Avalanche Energy |
13 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ
Tstg |
Operating Junction and
Storage Temperature Range |
-55 to +175 |
°C |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
DescriptionAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ48NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48NS design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak IRFZ48NS is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRFZ48NS is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ48NS) is available for lowprofile applications.
IRFZ48NS Data Sheet
