IRFZ48N

Maximum Operating Temperature :
Mounting Style :
Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 14 mOhms
Continuous Drain Current : 64 A


Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Pinout






Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The IRFZ48N  features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. The IRFZ48N  is intended for use in switched mode power supplies and general purpose switching applications.

Parameters:

Technical/Catalog Information	IRFZ48N
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	64A
Rds On (Max) @ Id, Vgs	14 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds	1970pF @ 25V
Power - Max	130W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	81nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRFZ48N IRFZ48N