MOSFET N-CH 55V 51A TO-262
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 55V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 51A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 13.6 mOhm @ 31A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) @ Vgs: | 46nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1460pF @ 25V | ||
Power - Max: | 82W | Mounting Type: | Through Hole | ||
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA | Supplier Device Package: | TO-262 |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 51 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V (See Fig. 9) | 36 | |
IDM | Pulsed Drain Current | 200 | |
PD @TC = 25°C | Maximum Power Dissipation | 82 | W |
Linear Derating Factor | 0.54 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy(Thermally Limited) | 63 | mJ |
EAS (tested) | Single Pulse Avalanche Energy Tested Value | 97 | |
IAR | Avalance Current | See Fig.12a,12b,15,16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
TJ Tstg |
Operating Junction and Storage Temperature Range |
-55 to +175 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ46ZL utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFZ46ZL features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.