IRFZ46Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Drain to Source Voltage (Vdss): 55V
Gate Charge (Qg) @ Vgs: 46nC @ 10V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 51A
Power - Max: 82W
Input Capacitance (Ciss) @ Vds: 1460pF @ 25V
Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V


Features:

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V (Silicon Limited)	51	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V (See Fig. 9)	36
IDM	Pulsed Drain Current	200
PD @TC = 25°C	Maximum Power Dissipation	82	W
	Linear Derating Factor	0.54	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy(Thermally Limited)	63	mJ
EAS (tested)	Single Pulse Avalanche Energy Tested Value	97
IAR	Avalance Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ Tstg	Operating Junction and Storage Temperature Range	-55 to +175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET IRFZ46Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFZ46Z  features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.