IRFZ46NSPBF

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 53 A
Resistance Drain-Source RDS (on) : 16.5 m Ohms


Features:

` Advanced Process Technology
`Surface Mount (IRFZ46NS)
`Low-profile through-hole (IRFZ46NL)
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated
`Lead-Free


Specifications

Parameter		Maximum	Units
ID @ TC=25	Continuous Drain Current,VGS @-10V	53	A
ID @ TC=100	Continuous Drain Current,VGS @-10V	37
IDM	Pulsed Drain Current	180
PD@ TA= 25	Power Dissipation	3.8	W
PD@ TC= 25	Power Dissipation	107
	Linear Derating Factor	0.71	W/
VGS	Gate-to-Source Voltage	±20	V
IAR	Avalanche Current	28	A
EAR	Repetitive Avalanche Energy	11	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/nS
Tj,TSTG	Operating Junction and Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

	Parameter	Typ	Max.	Units
RJC RJA	Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**	- -	1.4 40	/W

Description

Advanced HEXFET^®  Power MOSFETs from International Rectifier IRFZ46NSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device IRFZ46NSPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.

The D²Pak IRFZ46NSPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D²Pak IRFZ46NSPbF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ46NSPbF) is available for low-profile applications.

Parameters:

Technical/Catalog Information	IRFZ46NSPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	53A
Rds On (Max) @ Id, Vgs	16.5 mOhm @ 28A, 10V
Input Capacitance (Ciss) @ Vds	1696pF @ 25V
Power - Max	107W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	72nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFZ46NSPBF IRFZ46NSPBF