IRFZ46NS

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Gate Charge (Qg) @ Vgs: 72nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 3.8W
Current - Continuous Drain (Id) @ 25° C: 53A
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
Input Capacitance (Ciss) @ Vds: 1696pF @ 25V


Description

The IRFZ46NS is HEXFET power MOSFET.Advanced HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,provides the designer with and extremely efficent and reliable device for use in a wide variety of applications.

Features of the IRFZ46NS are:(1)advaced process technology; (2)surface mount; (3)175 operating temperature; (4)fast switching ; (5)fully avalanche rated.

The absolute maximum ratings of the IRFZ46NS can be summarized as:(1)continous drain current:53A; (2)continous drain current:37A; (3)pulsed drain current:180A; (4)power dissipation:3.8W; (5)power dissipation:107W; (6)linear derating factor:0.71W/; (7)gate-to-source voltage:±20; (8)avalanche current:28A; (9)repetitive avalanche energy:11mj; (10)peak diode recovery dv/dt:5.0V/ns; (11)operating junction and storage temperature range:-55~175; (12)soldering temperature,for 10 seconds:300(1.6mm from case).If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .