MOSFET MOSFT 55V 53A 16.5mOhm 48nC
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 53 A |
Mounting Style : | Through Hole | Package / Case : | TO-262 |
Packaging : | Tube |
Parameter |
Maximum |
Units | |
ID @ TC=25 |
Continuous Drain Current,VGS @-10V |
53 |
A |
ID @ TC=100 |
Continuous Drain Current,VGS @-10V |
37 | |
IDM |
Pulsed Drain Current |
180 | |
PD@ TA= 25 |
Power Dissipation |
3.8 |
W |
PD@ TC= 25 |
Power Dissipation |
107 | |
Linear Derating Factor |
0.71 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
IAR |
Avalanche Current |
28 |
A |
EAR |
Repetitive Avalanche Energy |
11 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/nS |
Tj,TSTG |
Operating Junction and Storage Temperature Range |
-55 to 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
Parameter |
Typ |
Max. |
Units | |
RJC RJA |
Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** |
- - |
1.4 40 |
/W |
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ46NLPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ46NLPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D2Pak IRFZ46NLPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRFZ46NLPbF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ46NLPbF) is available for low-profile applications.