IRFZ46N

MOSFET MOSFET, 55V, 46A, 16.5 mOhm, 48 nC Qg, TO-220AB

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SeekIC No. : 00159386 Detail

IRFZ46N: MOSFET MOSFET, 55V, 46A, 16.5 mOhm, 48 nC Qg, TO-220AB

floor Price/Ceiling Price

Part Number:
IRFZ46N
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/3

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 53 A
Resistance Drain-Source RDS (on) : 16.5 mOhms Configuration : Single
Package / Case : TO-220AB    

Description

Maximum Operating Temperature :
Mounting Style :
Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 16.5 mOhms
Continuous Drain Current : 53 A


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37
IDM Pulsed Drain Current 180
PD @TC = 25°C Power Dissipation 107 W
  Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage ±20 V
IAR Avalance Current 28 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
Tstg
Operating Junction and
Storage Temperature Range
-55 to +175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  



Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ46N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ46N design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRFZ46N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C53A
Rds On (Max) @ Id, Vgs16.5 mOhm @ 28A, 10V
Input Capacitance (Ciss) @ Vds 1696pF @ 25V
Power - Max107W
PackagingBulk
Gate Charge (Qg) @ Vgs72nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFZ46N
IRFZ46N



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