IRFZ46L

MOSFET N-CH 50V 50A D2PAK

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IRFZ46L Picture
SeekIC No. : 003431489 Detail

IRFZ46L: MOSFET N-CH 50V 50A D2PAK

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US $ .7~.7 / Piece | Get Latest Price
Part Number:
IRFZ46L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~450
  • Unit Price
  • $.7
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/4

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Product Details

Quick Details

Series: HEXFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 50V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 50A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 24 mOhm @ 32A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 66nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1800pF @ 25V
Power - Max: 3.7W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25° C: 50A
Packaging: Tube
Power - Max: 3.7W
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) @ Vds: 1800pF @ 25V
Supplier Device Package: D2PAK
Gate Charge (Qg) @ Vgs: 66nC @ 10V
Rds On (Max) @ Id, Vgs: 24 mOhm @ 32A, 10V


Features:

· Advanced Process Technology
· Surface Mount (IRFZ46S)
· Low-profile through-hole (IRFZ46L)
· 175°C Operating Temperature
· Fast Switching



Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current,VGS @ 10V
50
A
ID @ TC = 100°C
Continuous Drain Current,VGS @ 10V
38
IDM
Pulsed Drain Current
220
PD @TA = 25°C
Power Dissipation
3.7
W
PD @TC = 25°C
Power Dissipation
150
W
Linear Derating Factor
1.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
81
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55to+175
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
-
1.0
°C/W
RJA Junction-to-Ambient ( PCB Mounted,steady-state)**
-
40



Description

Third Generation HEXFETs from International Rectifier IRFZ46L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ46L design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRFZ46L is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRFZ46L is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ46L) is available for lowprofile applications.




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