IRFZ44VZSPBF

MOSFET MOSFT 60V 57A 12mOhm 43nC

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IRFZ44VZSPBF Picture
SeekIC No. : 00149813 Detail

IRFZ44VZSPBF: MOSFET MOSFT 60V 57A 12mOhm 43nC

floor Price/Ceiling Price

US $ .57~1.3 / Piece | Get Latest Price
Part Number:
IRFZ44VZSPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.3
  • $.84
  • $.61
  • $.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 57 A
Mounting Style : SMD/SMT Package / Case : D2PAK
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Continuous Drain Current : 57 A
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 60 V


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free



Specifications

Parameter
Max.
Units
ID @ TC = 25
Continuous Drain Current VGS@ 10V (Silicon Limited)
57
A
ID @ TC = 100
Continuous Drain Current, VGS@10V
40
IDM
Pulsed Drain Current
230
PD @ TC = 25
Power Dissipation
92
W
Linear Derating Factor
0.61
W/
VGS
Gate-to-Source Voltage
±20
V
EAS (Thermally limited)
Single Pulse Avalanche Energy
73
mJ
EAS (Tested)
Single Pulse Avalanche Energy Tested Value
110
IAR
Avalanche Current
See Fig.12a,12b,15,16
A
EAR
Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)





Description

Specifically designed for  Automotive applications  this HEXFET® Power MOSFET IRFZ44VZSPbF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFZ44VZSPbF features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRFZ44VZSPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C57A
Rds On (Max) @ Id, Vgs12 mOhm @ 34A, 10V
Input Capacitance (Ciss) @ Vds 1690pF @ 25V
Power - Max92W
PackagingTube
Gate Charge (Qg) @ Vgs65nC @ 10V
Package / CaseD²Pak, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFZ44VZSPBF
IRFZ44VZSPBF



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