FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 65nC @ 10V
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Current - Continuous Drain (Id) @ 25° C: 57A
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 1690pF @ 25V
Power - Max: 92W
Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
Features: Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to TjmaxSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V(Silicon Limited) |
57 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
40 |
| IDM |
Pulsed Drain Current |
230 |
| PD @TC = 25°C |
Power Dissipation |
92 |
W |
| |
Linear Derating Factor |
0.61 |
W/°C |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS (Thermally limited) |
Single Pulse Avalanche Energy |
73 |
mJ |
| EAS (tested) |
Single Pulse Avalanche Energy Tested Value |
110 |
| IAR |
Avalance Current |
See Fig.12a,12b,15,16 |
A |
| EAR |
Repetitive Avalanche Energy |
mJ |
TJ
Tstg |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
°C |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting torque, 6-32 or M3 srew |
10 lbfin (1.1Nm) |
|
DescriptionSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ44VZS utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFZ44VZS features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRFZ44VZS Data Sheet
