Features: ` Advanced Process Technology` Ultra Low On-Resistance` 175 Operating Temperature` Fast Switching` Repetitive Avalanche Allowed up to Tjmax` Lead-FreeSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current VGS@ 10V (Silicon Limited) 57 A ...
IRFZ44VZLPbF: Features: ` Advanced Process Technology` Ultra Low On-Resistance` 175 Operating Temperature` Fast Switching` Repetitive Avalanche Allowed up to Tjmax` Lead-FreeSpecifications Parameter ...
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Parameter |
Max. |
Units | |
ID @ TC = 25 |
Continuous Drain Current VGS@ 10V (Silicon Limited) |
57 |
A |
ID @ TC = 100 |
Continuous Drain Current, VGS@10V |
40 | |
IDM |
Pulsed Drain Current |
230 | |
PD @ TC = 25 |
Power Dissipation |
92 |
W |
Linear Derating Factor |
0.61 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS (Thermally limited) |
Single Pulse Avalanche Energy |
73 |
mJ |
EAS (Tested) |
Single Pulse Avalanche Energy Tested Value |
110 | |
IAR |
Avalanche Current |
See Fig.12a,12b,15,16 |
A |
EAR |
Repetitive Avalanche Energy |
mJ | |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
Specifically designed for Automotive applications this HEXFET® Power MOSFET IRFZ44VZLPbF utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFZ44VZLPbF features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.