Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Drain-Source Breakdown Voltage
: 60 V
Continuous Drain Current
: 55 A
Features: Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175 Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ 10V |
55 |
A |
| ID @ TA= 100 |
Continuous Drain Current, VGS @ 10V |
39 |
| IDM |
Pulsed Drain Current |
220 |
| PD @TC = 25 |
Power Dissipation |
115 |
W |
| |
Linear Derating Factor |
0.77 |
W/ |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy |
115 |
mJ |
| IAR |
Avalanche Current |
55 |
A |
| EAR |
Repetitive Avalanche Energy |
11 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
4.5 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting torque, 6-32 or M3 srew |
10 lbf•in (1.1N•m) |
|
DescriptionAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ44VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ44VPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parameters: | Technical/Catalog Information | IRFZ44VPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 55A |
| Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 31A, 10V |
| Input Capacitance (Ciss) @ Vds | 1812pF @ 25V |
| Power - Max | 115W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 67nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFZ44VPBF
IRFZ44VPBF
|
IRFZ44VPBF Data Sheet
