IRFZ44RPBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.028 Ohms


Features:

·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Drop in Replacement of the IRFZ44
for Linear/Audio Applications
·Lead-Free




Specifications

Symbol	Parameter	Max.	Units
ID @ TA=25	Continuous Drain Current, VGS @ 10V	50	A
ID @ TC=100	Continuous Drain Current, VGS @ 10V	36	A
IDM	Pulsed Drain Current	200	A
PD @ TC=25	Power Dissipation	150	W
	Linear Derating Factor	1.0	W/
VGS	Gate-to-Source Voltage	±20	V
Eas	Single Pulse Avalanche Energy	100	mJ
dv/dt	Peak Diode Recovery dv/dt	4.5	V/ns
Tj, TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbf•in (1.1 N•m)

Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44RPbF  utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ44RPbF  design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.