IRFU9N20DPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 9.4A
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 560pF @ 25V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V
Power - Max: 86W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


Parameters:

Technical/Catalog Information	IRFU9N20DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	9.4A
Rds On (Max) @ Id, Vgs	380 mOhm @ 5.6A, 10V
Input Capacitance (Ciss) @ Vds	560pF @ 25V
Power - Max	86W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFU9N20DPBF IRFU9N20DPBF