IRFU220BTU_F080, US $ .18-.2 , Fairchild Semiconductor, IRFU220BTU_F080 DataSheet download, circuit diagram from SeekIC.com

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IRFU220BTU_F080: MOSFET Trans N-Ch 100V 10A

IRFU220BTU_F080 Data Sheet

US $ .18~.2 / Piece | Get Latest Price

Part Number:: IRFU220BTU_F080
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	4.6 A
Resistance Drain-Source RDS (on) :	0.8 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.8 Ohms
Continuous Drain Current : 4.6 A

Parameters:

Technical/Catalog Information	IRFU220BTU_F080
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	4.6A
Rds On (Max) @ Id, Vgs	800 mOhm @ 2.3A, 10V
Input Capacitance (Ciss) @ Vds	390pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	16nC @ 10V
Package / Case	IPak, TO-251 (2 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFU220BTU_F080 IRFU220BTU_F080

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IRFU220BTU_F080

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