Features: · Ultra Low On-Resistance· P-Channel· Surface Mount (IRFR5505)· Straight Lead (IRFU5505)· Advanced Process Technology· Fast Switching· Fully Avalanche RatedSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -18 A ID @ TC = ...
IRFRU5505: Features: · Ultra Low On-Resistance· P-Channel· Surface Mount (IRFR5505)· Straight Lead (IRFU5505)· Advanced Process Technology· Fast Switching· Fully Avalanche RatedSpecifications Paramete...
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ -10V |
-18 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ -10V |
-11 | |
IDM | Pulsed Drain Current |
-64 | |
PD @TC = 25°C | Power Dissipation |
57 |
W |
Linear Derating Factor |
0.45 |
W/ | |
VGS | Gate-to-Source Voltage |
20 |
V |
EAS | Single Pulse Avalanche Energy |
150 |
mJ |
IAR | Avalanche Current |
-9.6 |
A |
EAR | Repetitive Avalanche Energy |
5.7 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55to+150 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
Fifth Generation HEXFETs IRFRU5505 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.