Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switching Fully Avalanche RatedSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.4 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ...
IRFR/U120N: Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switching Fully Avalanche RatedSpecifications Parameter Max. Units ID @ TC = 25°C Cont...
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance·I m...
Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
9.4 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
6.6 | |
IDM | Pulsed Drain Current |
38 | |
PD @TC = 25°C | Power Dissipation |
48 |
W |
Linear Derating Factor |
0.32 |
W/°C | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
EAS | Single Pulse Avalanche Energy |
91 |
mJ |
IAR | Avalanche Current |
5.7 |
A |
EAR | Peak Diode Recovery dv/dt |
5.0 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
Fifth Generation HEXFETs of the IRFR/U120N from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK of the IRFR/U120N is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.