MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 9.4 A | ||
Resistance Drain-Source RDS (on) : | 380 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Reel |
Technical/Catalog Information | IRFR9N20DTRPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 9.4A |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.6A, 10V |
Input Capacitance (Ciss) @ Vds | 560pF @ 25V |
Power - Max | 86W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 27nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFR9N20DTRPBF IRFR9N20DTRPBF |