MOSFET P-Chan 200V 3.6 Amp
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3.6 A | ||
Resistance Drain-Source RDS (on) : | 1.5 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |